SRAM 2Mb EMMC Memory Chips 256Kx8 10ns Async SRAM 3.3V

IS61LV2568L-10T SMD / SMT SRAM 2Mb 256Kx8 10ns Async SRAM 3.3v

FEATURES

• High-speed access time: 8, 10 ns

• Operating Current: 50mA (typ.)

• Standby Current: 700µA (typ.)

• Multiple center power and ground pins for greater noise immunity

• Easy memory expansion with CE and OE options

• CE power-down

• TTL compatible inputs and outputs

• Single 3.3V power supply

• Packages available: – 36-pin 400-mil SOJ – 44-pin TSOP (Type II)

• Lead-free available

DESCRIPTION

The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 36mW (max.) with CMOS input levels.

The IS61LV2568L operates from a single 3.3V power supply and all inputs are TTL-compatible. The IS61LV2568L is available in 36-pin 400-mil SOJ and 44-pin TSOP (Type II) packages.

SRAM 2Mb EMMC Memory Chips

SRAM 2Mb 256Kx8

10ns Async SRAM 3.3v

SRAM 2Mb EMMC Memory Chips 256Kx8 10ns Async SRAM 3.3V Images